Physical electronics devices and ics miscellaneous

Physical electronics devices and ics miscellaneous

Easy Questions

Physical Electronics Devices and ICs

Physical electronics devices and ics miscellaneous
  1. For the given transistors—
    1. Point contact transistor
    2. Bipolar junction transistor
    3. MOS field effect transistor
    4. Junction field effect transistor
    The correct sequence of these transistors in the increasing order of input impedance is—








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    MOS field effect transistor have higher input impedance than any other transistor.
    Hence the correct sequence is (D).

    Correct Option: D

    MOS field effect transistor have higher input impedance than any other transistor.
    Hence the correct sequence is (D).

  1. The diffusion potential across a p-n junction—








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    We know that the diffusion or junction potential is given as

    VT =
    kF
    		ln
    NAND

    qni 2

    or VT ∝ doping concentration
    Hence alternative (D) is the correct answer.

    Correct Option: D

    We know that the diffusion or junction potential is given as

    VT =
    kF
    		ln
    NAND

    qni 2

    or VT ∝ doping concentration
    Hence alternative (D) is the correct answer.

  1. The drift velocity of electrons, in silicon—








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    As we know drift velocity, vd = E µn
    where vd = drift velocity
    E = applied electric field
    µn = mobility of electron.
    However, with the increase in applied field, the number of electrons in the conduction band increases continuously due to which there will be large number of collision, due to this the motion becomes erratic and linear relationship becomes invalid.
    But for E > 104 v/cm, µn is inversely proportional to E.
    This means at very high electric field velocity of electron becomes saturate.
    Hence alternative (D) is the correct answer.

    Correct Option: D

    As we know drift velocity, vd = E µn
    where vd = drift velocity
    E = applied electric field
    µn = mobility of electron.
    However, with the increase in applied field, the number of electrons in the conduction band increases continuously due to which there will be large number of collision, due to this the motion becomes erratic and linear relationship becomes invalid.
    But for E > 104 v/cm, µn is inversely proportional to E.
    This means at very high electric field velocity of electron becomes saturate.
    Hence alternative (D) is the correct answer.

  1. When determining the common-emitter current gain by making small changes in direct currents, the collector voltage is held constant so that—








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    NA

    Correct Option: D

    NA

  1. The most noticeable effect of a small increase in temperature in the common emitter connected transistor is—








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    Since the leakage current is most sensitive to temperature among the given parameters.

    Correct Option: D

    Since the leakage current is most sensitive to temperature among the given parameters.