41. Current density in a conducting media is—

1. 1. J = nqµ

   
   
   

   2. J = σE a

   
   
   

   3. J = nµ E

   
   
   

   4. J = nqε
      

   
   
   

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   NA

   Correct Option: B

   NA

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42. In n-type semiconductor, there are—

1. 1. J = nqµ

   
   
   

   2. J = σE a

   
   
   

   3. J = nµ E

   
   
   

   4. J = nqε
      

   
   
   

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   NA

   Correct Option: C

   NA

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43. In p-type semiconductor, there are—

1. 1. No majority carriers

   
   
   

   2. Electrons as majority carriers

   
   
   

   3. Immobile positive ions

   
   
   

   4. Immobile negative ions

   
   
   

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   NA

   Correct Option: D

   NA

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44. The order of concentration of acceptor atoms created by isolations diffusion in monolithic IC for regions between the isolation islands is—

1. 1. 10²⁰ cm^–3

   
   
   

   2. 10²⁵ cm^–3

   
   
   

   3. 10¹⁵ cm^–3

   
   
   

   4. 10¹⁰ cm^–3

   
   
   

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   NA

   Correct Option: A

   NA

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45. Dynamic resistance of a diode varies as—

1. 1. I^–2

   
   
   

   2. I^–1

   
   
   

   3. I

   
   
   

   4. I²

   
   
   

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   Dynamic resistance of a diode varies as
   

   γf =	nVT
   	I

   
   i.e.

   γf =	1
   	I

   
   or γf varies as I^–1

   Correct Option: B

   Dynamic resistance of a diode varies as
   

   γf =	nVT
   	I

   
   i.e.

   γf =	1
   	I

   
   or γf varies as I^–1

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