Physical electronics devices and ics miscellaneous

Physical electronics devices and ics miscellaneous

Easy Questions

Physical Electronics Devices and ICs

Physical electronics devices and ics miscellaneous
  1. Assuming the forward diode drop as 0V, the output voltage V0, as shown in figure—










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    The given figure
    The above figure can be redrawn as
    from above figure
    10 – 10 K.I. – 3 – 10 K.I. = 0

    or I =
    7
    		=
    7
    		mA
    20 K20

    and V0 = 10 K.I. = 10 K.
    7
    		 mA = 3·5 V
    20

    Hence alternative (C) is the correct choice.

    Correct Option: C

    The given figure
    The above figure can be redrawn as
    from above figure
    10 – 10 K.I. – 3 – 10 K.I. = 0

    or I =
    7
    		=
    7
    		mA
    20 K20

    and V0 = 10 K.I. = 10 K.
    7
    		 mA = 3·5 V
    20

    Hence alternative (C) is the correct choice.

  1. Consider the circuit given below where Rf is the diode forward resistance and RL the load resistance. What is the average rectified current equal to?










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    The given circuit
    The above circuit is half wave rectifier. Therefore

    Var =
    Vm
    π

    Iar =
    Im
    		=
    Vm
    π(RL + Rf)

    Hence alternative (B) is the correct choice.

    Correct Option: B

    The given circuit
    The above circuit is half wave rectifier. Therefore

    Var =
    Vm
    π

    Iar =
    Im
    		=
    Vm
    π(RL + Rf)

    Hence alternative (B) is the correct choice.

  1. A p-n junction has a built-in potential of 0·8 V. The depletion layer width at a reverse bias of 1·2 V is 2 µm. For a reverse bias of 7·2 V, the depletion layer width will be—








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    We know that depletion layer width and reverse bias voltage are related by expression

    d α 1 + Vr 1 / 2
    VB

    Where,
    d = depletion
    width Vr = applied reverse bias voltage
    VB = built in potential
    Now,
    d1
    		=
    VB + VR1
    d2VB + VR2

    or d2 =
    VB + VR2
    		1 / 2 × d1
    VB + VR1

    or d2 =
    0·8 + 7·2
    		1 / 2 × µm
    0·8 + 1·2

    or d2 =
    8
    		1 / 2 × 2µm = 4µm
    2

    Hence alternative (A) is the correct choice.

    Correct Option: A

    We know that depletion layer width and reverse bias voltage are related by expression

    d α 1 + Vr 1 / 2
    VB

    Where,
    d = depletion
    width Vr = applied reverse bias voltage
    VB = built in potential
    Now,
    d1
    		=
    VB + VR1
    d2VB + VR2

    or d2 =
    VB + VR2
    		1 / 2 × d1
    VB + VR1

    or d2 =
    0·8 + 7·2
    		1 / 2 × µm
    0·8 + 1·2

    or d2 =
    8
    		1 / 2 × 2µm = 4µm
    2

    Hence alternative (A) is the correct choice.

  1. Which of the following is not associated with a pn junction?








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    Channel length modulation is not associated with pn-junction diode.

    Correct Option: D

    Channel length modulation is not associated with pn-junction diode.

  1. The softness factor for soft-recovery and fast-recovery diodes are respectively—








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    Softness factor for soft recovery diodes are 1 and for fast recovery diodes are < 1.

    Correct Option: D

    Softness factor for soft recovery diodes are 1 and for fast recovery diodes are < 1.