Physical electronics devices and ics miscellaneous


Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. Increasing the collector supply voltage will increase—









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    NA

    Correct Option: D

    NA


  1. In the active region, the collector current is not changed significantly by—









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    In the active region, the collector current is not significantly by current gain.

    Correct Option: C

    In the active region, the collector current is not significantly by current gain.



  1. Consider the regulated power supply given below:
    Here VZ = 9·1 V and VBE = 0·7 V. Value of V0 is equal to—











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    The given figure

    Given, VZ = 9·1V, VBE = 0·7V, V0 =?
    From above figure, voltage at node A
    VA = VBE + VZ = 0·7 + 9·1 = 9·8V
    Applying polential diviider rule at node A, we get

    VA = V0·
    R4
    R4 + R3

    or V0 = VA·R4 + R3
    R4

    or V0 = 9·8 ×
    (1K + 2K)
    = 29·4V
    2K

    Hence alternative (B) is the correct choice.

    Correct Option: B

    The given figure

    Given, VZ = 9·1V, VBE = 0·7V, V0 =?
    From above figure, voltage at node A
    VA = VBE + VZ = 0·7 + 9·1 = 9·8V
    Applying polential diviider rule at node A, we get

    VA = V0·
    R4
    R4 + R3

    or V0 = VA·R4 + R3
    R4

    or V0 = 9·8 ×
    (1K + 2K)
    = 29·4V
    2K

    Hence alternative (B) is the correct choice.


  1. Consider the transistor circuit given below. It is desired to have V0 = Vin. What should be the value of R to achieve the condition. Assume VBE = 0·7 V, VCE(sat) = 0·2V and I = 8·6 mA—











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    The given circuit

    Given, VBE = 0·7V, VCE(sat) = 0·2V and I = 8·6 mA The given circuit can be redrawn as

    From above figure, applying KVL to the loop, we get
    – IR – VBE + 5 = 0
    or – (– 8·6 mA).R + 4·3 = 0

    or R =
    4·3 V
    = 500 Ω
    8·6 mA

    Hence alternative (B) is the correct choice.

    Correct Option: B

    The given circuit

    Given, VBE = 0·7V, VCE(sat) = 0·2V and I = 8·6 mA The given circuit can be redrawn as

    From above figure, applying KVL to the loop, we get
    – IR – VBE + 5 = 0
    or – (– 8·6 mA).R + 4·3 = 0

    or R =
    4·3 V
    = 500 Ω
    8·6 mA

    Hence alternative (B) is the correct choice.



  1. The specification for a silicon transistor are: ICQ = 300 mA and fT = 350 MHz, hfe = 150, Cob = 4 pF. The values of rb′e and gm of the transistor will be—









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    Given, Ica = 300 mA, fT = 350 MHZ, hfe = 150, Cob = 4pF

    We know that, gb’e =
    gm
    hfe

    then rb’e =
    1
    =
    hfe
    =
    hfe
    =
    hfe·VT
    gb’egmICQ / VTICQ

    or rb’e
    150 × 25 mV
    = 12·5 Ω
    300 mA

    or rb’e = 12·5 ohms
    and gm=
    IC
    =
    300 mA
    = 12 mhos
    VT25 mV

    Correct Option: C

    Given, Ica = 300 mA, fT = 350 MHZ, hfe = 150, Cob = 4pF

    We know that, gb’e =
    gm
    hfe

    then rb’e =
    1
    =
    hfe
    =
    hfe
    =
    hfe·VT
    gb’egmICQ / VTICQ

    or rb’e
    150 × 25 mV
    = 12·5 Ω
    300 mA

    or rb’e = 12·5 ohms
    and gm=
    IC
    =
    300 mA
    = 12 mhos
    VT25 mV