Physical electronics devices and ics miscellaneous
- Increasing the collector supply voltage will increase—
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NA
Correct Option: D
NA
- In the active region, the collector current is not changed significantly by—
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In the active region, the collector current is not significantly by current gain.
Correct Option: C
In the active region, the collector current is not significantly by current gain.
- Consider the regulated power supply given below:
Here VZ = 9·1 V and VBE = 0·7 V. Value of V0 is equal to—
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The given figure
Given, VZ = 9·1V, VBE = 0·7V, V0 =?
From above figure, voltage at node A
VA = VBE + VZ = 0·7 + 9·1 = 9·8V
Applying polential diviider rule at node A, we getVA = V0· R4 R4 + R3 or V0 = VA· R4 + R3 R4 or V0 = 9·8 × (1K + 2K) = 29·4V 2K
Hence alternative (B) is the correct choice.Correct Option: B
The given figure
Given, VZ = 9·1V, VBE = 0·7V, V0 =?
From above figure, voltage at node A
VA = VBE + VZ = 0·7 + 9·1 = 9·8V
Applying polential diviider rule at node A, we getVA = V0· R4 R4 + R3 or V0 = VA· R4 + R3 R4 or V0 = 9·8 × (1K + 2K) = 29·4V 2K
Hence alternative (B) is the correct choice.
- Consider the transistor circuit given below. It is desired to have V0 = Vin. What should be the value of R to achieve the condition. Assume VBE = 0·7 V, VCE(sat) = 0·2V and I = 8·6 mA—
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The given circuit
Given, VBE = 0·7V, VCE(sat) = 0·2V and I = 8·6 mA The given circuit can be redrawn as
From above figure, applying KVL to the loop, we get
– IR – VBE + 5 = 0
or – (– 8·6 mA).R + 4·3 = 0or R = 4·3 V = 500 Ω 8·6 mA
Hence alternative (B) is the correct choice.Correct Option: B
The given circuit
Given, VBE = 0·7V, VCE(sat) = 0·2V and I = 8·6 mA The given circuit can be redrawn as
From above figure, applying KVL to the loop, we get
– IR – VBE + 5 = 0
or – (– 8·6 mA).R + 4·3 = 0or R = 4·3 V = 500 Ω 8·6 mA
Hence alternative (B) is the correct choice.
- The specification for a silicon transistor are: ICQ = 300 mA and fT = 350 MHz, hfe = 150, Cob = 4 pF. The values of rb′e and gm of the transistor will be—
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Given, Ica = 300 mA, fT = 350 MHZ, hfe = 150, Cob = 4pF
We know that, gb’e = gm hfe then rb’e = 1 = hfe = hfe = hfe·VT gb’e gm ICQ / VT ICQ or rb’e 150 × 25 mV = 12·5 Ω 300 mA
or rb’e = 12·5 ohmsand gm= IC = 300 mA = 12 mhos VT 25 mV Correct Option: C
Given, Ica = 300 mA, fT = 350 MHZ, hfe = 150, Cob = 4pF
We know that, gb’e = gm hfe then rb’e = 1 = hfe = hfe = hfe·VT gb’e gm ICQ / VT ICQ or rb’e 150 × 25 mV = 12·5 Ω 300 mA
or rb’e = 12·5 ohmsand gm= IC = 300 mA = 12 mhos VT 25 mV