Physical electronics devices and ics miscellaneous
- In a properly biased transistor—
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In a properly biased transistor the emitter to base depletion region is small and collector to base depletion region is large because
* The doping of emitter region is large as compare to collector region sincedepletion width ∝ 1 √Doping concentration
* Usually the emitter to base junction is forward biased while collector to base junction is reverse biased.Correct Option: D
In a properly biased transistor the emitter to base depletion region is small and collector to base depletion region is large because
* The doping of emitter region is large as compare to collector region sincedepletion width ∝ 1 √Doping concentration
* Usually the emitter to base junction is forward biased while collector to base junction is reverse biased.
- The phase difference between the input and output voltages in a common base arrangement is—
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The phase difference between the input and output voltages in a common base arrangement is 0º.
Correct Option: D
The phase difference between the input and output voltages in a common base arrangement is 0º.
- Most of the majority carriers from emitter—
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Most of the majority carriers from emitter pass through the base region to the collector.
Correct Option: C
Most of the majority carriers from emitter pass through the base region to the collector.
- At the base emitter junction of a transistor, one finds—
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At the base-emitter junction of a transistor, one finds low resistance because usually base-emitter junction is forward biased
Correct Option: C
At the base-emitter junction of a transistor, one finds low resistance because usually base-emitter junction is forward biased
- In a p-n-p transistor, current carriers are—
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In a pnp transistor, current carriers are holes.
Correct Option: D
In a pnp transistor, current carriers are holes.