Physical electronics devices and ics miscellaneous Easy Questions and Answers | Page - 19

Physical electronics devices and ics miscellaneous

The cause of potential barrier in a pn-junction diode is—

1. Depletion of positive charges near the junction
1. Concentration of positive charges near the junction
1. Depletion of negative charges near the junction
1. Concentration of positive and negative charges near the junction

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The cause of potential barrier in a junction diode is concentration of positive and negative charges near the junction.

Correct Option: D

The cause of potential barrier in a junction diode is concentration of positive and negative charges near the junction.

A pn-junction has a thickness of the order of—

1. 1 cm
1. 1 mm
1. 10⁶ cm
1. 10¹² cm

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A pn-junction has a thickness of the order 10⁶ cm.

Correct Option: C

A pn-junction has a thickness of the order 10⁶ cm.

Which diode(s) has (have) a zero voltage drop in the ideal model?

1. Si
1. Ge
1. Both Si and Ge
1. Neither Si nor Ge

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NA

Correct Option: C

NA

Determine the current level if E = 15 V and R = 3 kΩ—

1. 0 A
1. 4.76 mA
1. 5 mA
1. 5 A

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Since type of diode is not given, so we will assume ideal diode from given circuit.
I = 15V 5 mA
3kΩ

Correct Option: C

Since type of diode is not given, so we will assume ideal diode from given circuit.
I = 15V 5 mA
3kΩ

Determine the voltage across the resistor—

1. 0 V
1. 0.09 V
1. 0.2 V
1. 0.44 V

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Since type of diode is not given, so we will assume zero cut-in voltage. Therefore all voltage will appear across the resistor i.e. 0.2V.

Correct Option: C

Since type of diode is not given, so we will assume zero cut-in voltage. Therefore all voltage will appear across the resistor i.e. 0.2V.