Home » Physical Electronics Devices and ICs » Physical electronics devices and ics miscellaneous » Question

Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. The diffusion potential across a p-n junction—
    1. Decreases with increasing doping concentration
    2. Increases with decreasing band gap
    3. Does not depend on doping concentration
    4. Increases with increasing doping concentration
Correct Option: D

We know that the diffusion or junction potential is given as

VT =
kF
ln
NAND

qni 2

or VT ∝ doping concentration
Hence alternative (D) is the correct answer.



Your comments will be displayed only after manual approval.