Semiconductor Electronics : Materials, Devices and Simple Circuits

Semiconductor Electronics : Materials, Devices and Simple Circuits

Easy Questions

Modern Physics

Dual Nature of Radiation and Matter
Atoms
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Semiconductor Electronics : Materials, Devices and Simple Circuits
  1. A semi-conducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be








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    ​In reverse bias, the current through a p-n junction is almost zero.

    Correct Option: A

    ​In reverse bias, the current through a p-n junction is almost zero.

  1. Which of the following when added acts as an impurity into silicon produced n-type semi-conductor?








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    n-type of silicon semiconductor is formed when impurity is mixed with pentavalent atom. Out of given choices only phosphorus is pentavalent.

    Correct Option: A

    n-type of silicon semiconductor is formed when impurity is mixed with pentavalent atom. Out of given choices only phosphorus is pentavalent.

  1. In a junction diode, the holes are due to​​








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    Holes are produced due to missing of electrons.

    Correct Option: D

    Holes are produced due to missing of electrons.

  1. Application of a forward bias to a p–n junction​​








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    Number of donors is more because electrons from –ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. The neutralised pentavalent atom are again in position to donate electrons.

    Correct Option: C


    Number of donors is more because electrons from –ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. The neutralised pentavalent atom are again in position to donate electrons.

  1. The cause of the potential barrier in a p-n diode is








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    During the formation of a junction diode, holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect of each other and as a result, a thin layer at the junction becomes free from any of charge carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative on the p-side and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.

    Correct Option: D

    During the formation of a junction diode, holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect of each other and as a result, a thin layer at the junction becomes free from any of charge carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative on the p-side and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.