Application of a forward bias to a p

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Application of a forward bias to a p–n junction

1. widens the depletion zone
2. increases the potential difference across the depletion zone
3. increases the number of donors on the n side
4. increases the electric field in the depletion zone

Correct Option: C

Number of donors is more because electrons from –ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. The neutralised pentavalent atom are again in position to donate electrons.