At 0 K,  motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.

Correct Option: A

At 0 K,  motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.

In reverse biasing, the conduction across the p-n junction does not take place due to majority carriers but takes place due to minority carriers if the voltage of external battery is large. The size of the depletion region increases thereby increasing the potential barrier.

Correct Option: C

In reverse biasing, the conduction across the p-n junction does not take place due to majority carriers but takes place due to minority carriers if the voltage of external battery is large. The size of the depletion region increases thereby increasing the potential barrier.

In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
i.e., there occurs no potential drop, so potential across R is V in forward biased.

Correct Option: B

In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
i.e., there occurs no potential drop, so potential across R is V in forward biased.

For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.

Correct Option: B

For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.

Barrier potential does not depend on diode design while barrier potential depends upon temperature, doping density, and forward biasing.

Correct Option: B

Barrier potential does not depend on diode design while barrier potential depends upon temperature, doping density, and forward biasing.