Semiconductor Electronics : Materials, Devices and Simple Circuits
- Reverse bias applied to a junction diode
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In reverse biasing, the conduction across the p-n junction does not take place due to majority carriers but takes place due to minority carriers if the voltage of external battery is large. The size of the depletion region increases thereby increasing the potential barrier.
Correct Option: C
In reverse biasing, the conduction across the p-n junction does not take place due to majority carriers but takes place due to minority carriers if the voltage of external battery is large. The size of the depletion region increases thereby increasing the potential barrier.
- Barrier potential of a p-n junction diode does not depend on
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Barrier potential does not depend on diode design while barrier potential depends upon temperature, doping density, and forward biasing.
Correct Option: B
Barrier potential does not depend on diode design while barrier potential depends upon temperature, doping density, and forward biasing.
- If a full wave rectifier circuit is operating from 50Hz mains, the fundamental frequency in the ripple will be
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In case of full wave rectifier, Fundamental frequency = 2 × mains frequency = 2 × 50 = 100Hz.
Correct Option: A
In case of full wave rectifier, Fundamental frequency = 2 × mains frequency = 2 × 50 = 100Hz.
- In a p-n junction photocell, the value of the photo-electromotive force produced by monochromatic light is proportional to
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Electromotive force depends upon intensity of light falling, it does not depend on frequency of barrier voltage.
Correct Option: C
Electromotive force depends upon intensity of light falling, it does not depend on frequency of barrier voltage.
- The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10V. The d.c. component of the output voltage is
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V = V0 = 10 V π π Correct Option: C
V = V0 = 10 V π π