Semiconductor Electronics : Materials, Devices and Simple Circuits


Semiconductor Electronics : Materials, Devices and Simple Circuits

  1. In forward bias, the width of potential barrier in a p-n junction diode









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    We know that in forward bias of p-n junction diode, when positive terminal is connected to p-type diode, the repulsion of holes takes place which decreases the width of potential barrier by striking the combination of holes and electrons.

    Correct Option: B

    We know that in forward bias of p-n junction diode, when positive terminal is connected to p-type diode, the repulsion of holes takes place which decreases the width of potential barrier by striking the combination of holes and electrons.


  1. An alternating current can be converted into direct current by a









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    rectifier

    Correct Option: D

    rectifier



  1. The intrinsic semiconductor becomes an insulator at ​​









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    At 0 K,  motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.

    Correct Option: A

    At 0 K,  motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.


  1. In a p-n junction









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    For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.

    Correct Option: B

    For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.



  1. A d.c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure below. The potential difference across R will be​​









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    In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
    i.e., there occurs no potential drop, so potential across R is V in forward biased.

    Correct Option: B

    In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
    i.e., there occurs no potential drop, so potential across R is V in forward biased.