Semiconductor Electronics : Materials, Devices and Simple Circuits
- In forward bias, the width of potential barrier in a p-n junction diode
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We know that in forward bias of p-n junction diode, when positive terminal is connected to p-type diode, the repulsion of holes takes place which decreases the width of potential barrier by striking the combination of holes and electrons.
Correct Option: B
We know that in forward bias of p-n junction diode, when positive terminal is connected to p-type diode, the repulsion of holes takes place which decreases the width of potential barrier by striking the combination of holes and electrons.
- An alternating current can be converted into direct current by a
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rectifier
Correct Option: D
rectifier
- The intrinsic semiconductor becomes an insulator at
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At 0 K, motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.
Correct Option: A
At 0 K, motion of free electrons stop. Hence conductivity becomes zero. Therefore, at 0 K intrinsic semiconductor becomes insulator.
- In a p-n junction
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For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.
Correct Option: B
For conduction, p-n junction must be forward biased. For this p-side should be connected to higher potential and n-side to lower potential.
- A d.c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure below. The potential difference across R will be
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In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
i.e., there occurs no potential drop, so potential across R is V in forward biased.Correct Option: B
In forward biasing, the diode conducts. For ideal junction diode, the forward resistance is zero; therefore, entire applied voltage occurs across external resistance R
i.e., there occurs no potential drop, so potential across R is V in forward biased.