Semiconductor Electronics : Materials, Devices and Simple Circuits

Semiconductor Electronics : Materials, Devices and Simple Circuits

Easy Questions

Modern Physics

Dual Nature of Radiation and Matter
Atoms
Nuclei
Semiconductor Electronics : Materials, Devices and Simple Circuits
  1. The cause of the potential barrier in a p-n diode is








  1. View Hint View Answer Discuss in Forum

    During the formation of a junction diode, holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect of each other and as a result, a thin layer at the junction becomes free from any of charge carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative on the p-side and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.

    Correct Option: D

    During the formation of a junction diode, holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect of each other and as a result, a thin layer at the junction becomes free from any of charge carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative on the p-side and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.

  1. A semi-conducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be








  1. View Hint View Answer Discuss in Forum

    ​In reverse bias, the current through a p-n junction is almost zero.

    Correct Option: A

    ​In reverse bias, the current through a p-n junction is almost zero.

  1. In a junction diode, the holes are due to​​








  1. View Hint View Answer Discuss in Forum

    Holes are produced due to missing of electrons.

    Correct Option: D

    Holes are produced due to missing of electrons.

  1. Which of the following when added acts as an impurity into silicon produced n-type semi-conductor?








  1. View Hint View Answer Discuss in Forum

    n-type of silicon semiconductor is formed when impurity is mixed with pentavalent atom. Out of given choices only phosphorus is pentavalent.

    Correct Option: A

    n-type of silicon semiconductor is formed when impurity is mixed with pentavalent atom. Out of given choices only phosphorus is pentavalent.

  1. A depletion layer consists of








  1. View Hint View Answer Discuss in Forum

    Depletion layer is formed by diffusion of holes and electrons from p-type semiconductor to n-type semiconductor and vice-versa. Hence, donor and acceptor atom get positive and negative charge leading to formation of p-n junction. Thus, donor and acceptor are immobile.

    Correct Option: D

    Depletion layer is formed by diffusion of holes and electrons from p-type semiconductor to n-type semiconductor and vice-versa. Hence, donor and acceptor atom get positive and negative charge leading to formation of p-n junction. Thus, donor and acceptor are immobile.