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Semiconductor Electronics : Materials, Devices and Simple Circuits

  1. The cause of the potential barrier in a p-n diode is
    1. depletion of positive charges near the junction
    2. concentration of positive charges near the junction
    3. depletion of negative charges near the junction
    4. ​concentration of positive and negative charges near the junction
Correct Option: D

During the formation of a junction diode, holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect of each other and as a result, a thin layer at the junction becomes free from any of charge carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative on the p-side and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.



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