Semiconductor Electronics : Materials, Devices and Simple Circuits Easy Questions and Answers | Page - 20

Semiconductor Electronics : Materials, Devices and Simple Circuits

In a n-type semiconductor, which of the following statement is true?

1. Electrons are minority carriers and pentavalent atoms are dopants.
1. Holes are minority carriers and pentavalent atoms are dopants.
1. Holes are majority carriers and trivalent atoms are dopants.
1. Electrons are majority carriers and trivalent atoms are dopants.

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In a n-type semiconductor holes are minority carriers and pentavalent atoms are dopants.

Correct Option: B

In a n-type semiconductor holes are minority carriers and pentavalent atoms are dopants.

The barrier potential of a p-n junction depends on:
(A)type of semi conductor material
(B)amount of doping
(C)temperature
Which one of the following is correct ?

1. (A) and (B) only
1. (B) only
1. (B) and (C) only
1. (A), (B) and (C)

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The barrier potential of a p-n junction depends on amount of doping, type of semiconductor material and temperature.

Correct Option: D

The barrier potential of a p-n junction depends on amount of doping, type of semiconductor material and temperature.

The given graph represents V - I characteristic characteristic for a semiconductor device.

Which of the following statement is correct ?

1. It is V - I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.
1. It is a for a solar cell and point A and B represent open circuit voltage and current, respectively.
1. It is for a photo diode and points A and B represent open circuit voltage and current, respectively.
1. It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.

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The given graph represents V-I characteristics of solar cell.

Correct Option: A

The given graph represents V-I characteristics of solar cell.

In the given figure, a diode D is connected to an external resistance R = 100 Ω and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

1. 40 mA
1. 20 mA
1. 35 mA
1. 30 mA

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Current I = V and β (3.5 - 0.5) A
R 100

[ ∵ Barrier potential V_B = 0.5V]
= 3 = 30 mA
100

Correct Option: D

Current I = V and β (3.5 - 0.5) A
R 100

[ ∵ Barrier potential V_B = 0.5V]
= 3 = 30 mA
100

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across R_L will be

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Here P-N junction diode rectifies half of the ac wave i.e., acts as half wave rectifier. During + ve half cycle Diode → forward biased output across will be

During –ve half cycle Diode → reverse biased output will not obtained.

Correct Option: C

Here P-N junction diode rectifies half of the ac wave i.e., acts as half wave rectifier. During + ve half cycle Diode → forward biased output across will be

During –ve half cycle Diode → reverse biased output will not obtained.