Semiconductor Electronics : Materials, Devices and Simple Circuits

Semiconductor Electronics : Materials, Devices and Simple Circuits

Easy Questions

Modern Physics

Dual Nature of Radiation and Matter
Atoms
Nuclei
Semiconductor Electronics : Materials, Devices and Simple Circuits
  1. In the diagram, the input is across the terminals A and C and the output is across B and D. Then the output is








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    The given circuit is a circuit of full wave rectifier.

    Correct Option: C

    The given circuit is a circuit of full wave rectifier.

  1. When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to








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    When p-n junction is reverse biased, the flow of current is due to drifting of minority charge carriers across the junction.

    Correct Option: B

    When p-n junction is reverse biased, the flow of current is due to drifting of minority charge carriers across the junction.

  1. Which of the following, when added as an impurity, into the silicon, silicon, produces n-type semi-conductor?








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    Phosphorous (P) is pentavalent and silicon is tetravalent. Therefore, when silicon is doped with pentavalent impurity, it forms a n-type semiconductor.

    Correct Option: A

    Phosphorous (P) is pentavalent and silicon is tetravalent. Therefore, when silicon is doped with pentavalent impurity, it forms a n-type semiconductor.

  1. When arsenic is added as an impurity to silicon, the resulting material is​​








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    Arsenic contains 5 electrons in its outermost shell. When Arsenic is mixed with silicon there is one electron extra in silicon crystal. Hence, such type of semi conductor is n-type semi conductor.

    Correct Option: A

    Arsenic contains 5 electrons in its outermost shell. When Arsenic is mixed with silicon there is one electron extra in silicon crystal. Hence, such type of semi conductor is n-type semi conductor.

  1. ​To obtain a p-type germanium semiconductor, it must be doped with​​








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    p-type germanium semiconductor is formed when it is doped with a trivalent impurity atom.

    Correct Option: C

    p-type germanium semiconductor is formed when it is doped with a trivalent impurity atom.