131. The MOSFET swit ch in it s on-st at e may be considered equivalent to
     

1. 1. resistor

   
   
   

   2. inductor

   
   
   

   3. capacitor

   
   
   

   4. battery

   
   
   

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1. View Hint View Answer Discuss in Forum

   MOSFET switch in ON state is equivalent to a capacitor.

   Correct Option: C

   MOSFET switch in ON state is equivalent to a capacitor.

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132. Three different circuits for biasing junction transistor amplifiers are given below
     
     The correct decreasing order of preference of these circuits fr om the point of view of bias stabilisation is
     

1. 1. I, II, III

   
   
   

   2. III, II, I

   
   
   

   3. II, III, I

   
   
   

   4. I, III, II

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: C

   NA

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133. The threshold voltage of an n-channel MOSFET can be increased by
     

1. 1. increasing channel doping concentration

   
   
   

   2. reducing channel length

   
   
   

   3. reducing gate oxide thickness

   
   
   

   4. decreasing channel doping concentration

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: B

   NA

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134. Thermal runaway is not possible in FET because as the temperature of FET increases
     

1. 1. mobility decreases

   
   
   

   2. transconductance increases

   
   
   

   3. drain current increases

   
   
   

   4. none of these

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: A

   NA

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135. The transistor in the circuit shown is operating in
     
     

1. 1. cut-off region

   
   
   

   2. active region

   
   
   

   3. saturation region

   
   
   

   4. either in the active or saturation region

   
   
   

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1. View Hint View Answer Discuss in Forum

   From the figure,
   

   IB =	5 - VBE	=	4.2	= 4.2 mA
   	100 K		100 K

   
   

   Ic =	4.8	mA
   	5

   
   

   Since (IB)min =	Ic	≤ IB ,
   	hFE

   
   hence the transistor will operate in saturation region.

   Correct Option: C

   From the figure,
   

   IB =	5 - VBE	=	4.2	= 4.2 mA
   	100 K		100 K

   
   

   Ic =	4.8	mA
   	5

   
   

   Since (IB)min =	Ic	≤ IB ,
   	hFE

   
   hence the transistor will operate in saturation region.

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