A sample of silicon at T = 300 K is doped with boron at

A sample of silicon at T = 300 K is doped with boron at a concentration of 2.5 × 10³ cm^–3 and with arsenic at a concentration of 1 × 10³ cm^–3. The material is—

1. p-type with p₀ = 1.5 × 10³ cm^–3
2. p-type with p₀ = 1.5 × 10⁷ cm^–3
3. n-type with n₀ = 1.5 × 10¹³ cm^–3
4. n-type with n₀ = 1.5 × 10⁷ cm^–3

Since N_a > N_d → It means material is p-type
P_o = N_a – N_d
or P_o = (2.5 × 10³ – 1.0 × 10³) cm^–3
or P_o = 1.5 × 10³ cm^–3