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Physical Electronics Devices and ICs

  1. When p-side is lightly doped as compare to the n-side then penetration of depletion region—
    1. Is more on the p-side
    2. Is more on the n-side
    3. Same on both side
    4. None of these
Correct Option: A

When p side is lightly doped as compare to the nside then penetration of depletion region is more on the p-side because depletion width is inversely proportional to the square root of doping concentration i.e.

depletion Width
1
Doping concentration

It means light doping gives more penetration of depletion region



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