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Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. The intrinsic carrier density at 300K is 1.5 × 1010/cm3, in silicon. For n-type silicon doped to 2.25 × 101 5 atoms/cm3, the equilibrium electron and hole densities are—
    1. n = 1.5 × 1015/cm3, p = 1.5 × 1010/ cm3
    2. n = 1.5 × 1015/cm3, p = 2.25 × 1015/ cm3
    3. n = 2.25 × 1015/cm3, p = 1.0 × 105/ cm3
    4. n = 1.5 × 1010/cm3, p = 1.5 × 1010/ cm3
Correct Option: C

Given: ni = 1.5 × 1010 /cm3
ND = 2.25 × 1015 n

Pn
ni2
=
(1.5 × 1010)2
ND2.25 × 1015

= 1 × 105/cm3 p



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