A heavily doped n-typed semiconductor has the following

A heavily doped n-typed semiconductor has the following data:
Hole-electron mobility ratio: 0·4
Doping concentration: 4·2 × 10⁸ atoms/m³
Intrinsic concentration: 1·5 × 10⁴ atoms/m³
The ratio of conductance of the n-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by—

Given, _r = 11·7
and 0 = 8·85 × 10–12 F/m.
d = 10µm

We know that, C =	0 r^A
	d

or		C	=	0 r	=	8.85 x 10^-12 x 11.7
		A		d		10 x 10^-6

= 10·35 µF 10 µF