The built-in potential (Diffusion Potential) in a p-n junction

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The built-in potential (Diffusion Potential) in a p-n junction—

1. Is equal to the difference in the Fermi level of the two sides, expressed in volts
2. Increases with the increase in the doping levels of the two sides
3. Increases with the increase in temperature
4. Is equal to the average of the Fermi levels of the two sides
5. A, B and C

Correct Option: E

(A), (B), (C) Since the built in potential (Diffusion potential) in a p-n junction
* is equal to the difference in Fermi level of two sides
* increases with increase in the doping level of two sides since

V_T =		kT	I_n		N_AN_D
		q			m²

VT = kT q In NAND m2
* increases with increase in temperature, since VT ∝ T.
Hence alternative (A), (B) and (C) are the correct answer.