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Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. An n-type silicon sample has a resistivity of 5 Ω - cm at T = 300 K. The mobility is µa = 1350 cm2/ V - s. The donor impurity concentration is—
    1. 2.86 × 10–14 cm–3
    2. 9.25 × 1014 cm–3
    3. 11.46 × 1015 cm–3
    4. 1.1 × 10–15 cm–3
Correct Option: B

Given data, ρ = 5 Ω-cm
µn = 1350 cm2/ V-s
Nd =?

ρ =
1
=
1

σnNd

5 =
1
1.6 × 10–19 × 1350 × Nd

or Nd = 9.25 × 1014 cm–3



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